A Facile Aqueous Solution Route for the Growth of Chalcogenide Perovskite BaZrS3 Films

The prototypical chalcogenide perovskite, BaZrS3 (BZS), with its direct bandgap of 1.7–1.8 eV, high chemical stability, and strong light–matter interactions, has garnered significant interest over the past few years. So far, attempts to grow films have been limited mainly physical vapor deposition techniques. Here, we report fabrication BZS thin via a facile aqueous solution route polymer-assisted (PAD), where polymer-chelated cation precursor were sulfurized in mixed CS2 Ar atmosphere. formation single-phase polycrystalline film at processing temperature 900 °C was confirmed by X-ray diffraction Raman spectroscopy. stoichiometry verified Rutherford Backscattering spectrometry energy-dispersive showed photoluminescence peak around 1.8 eV exhibited photogenerated current under light illumination wavelength 530 nm. Temperature-dependent resistivity analysis revealed that conduction dark condition could be described Efros–Shklovskii variable range hopping model 60–300 K, an activation energy about 44 meV.